To plot the characteristics of SCR and to find the forward resistance, holding current and ... readings for every 5V and enter the readings in the tabular column. As already said in previous blog posts, the gate triggering may occur in any of the following four modes. 6.3.2 illustrates the main characteristics of the triac. POWER ELECTRONICS LAB CHARACTERISTICS OF IGBT Experiment 1c Aim: To study the output and transfer characteristics of IGBT Apparatus: Trainers Kit Ammeter (0-200mA) Voltmeter (0-20V) Patch Chords Circuit Diagram: Procedure: Out-Put Characteristics 6) Connect the collector, emitter and the gate terminals to the characteristics circuit It can be triggered by reaching its breakover voltage (+ or -). Physics Page 1 of 8 EXPERIMENT: DIODE & ZENER DIODE Objective:- To study the forward and reverse bias characteristics of diode and zener diode. NAME OF LABORATORY: Engg. b) Start pumps 1 and 2, and increase the speed until the pumps are operating at 60 rev/sec. This is expected because triac consists of two SCRs connected in parallel but opposite in … 0000014910 00000 n (6.3). Lab 3 Appendices: Data sheets and Curve Tracer operation. Testing triac using a multimeter. The family of curves obtained by plotting I C against V CE for each value of I B is called output characteristics. 01-04 2 Static characteristics of MOSFET and IGBT. Apparatus Required: 1. ��X�v UlޔIȎ)��{0�uS,�r1����{�Ȓsur;r���E푅������lqLj��̝����F����K����UluQ� Q�����̧��Rw��T�g�>�i㴞��.���չ8�SZ�e{�ٌ#��0W�xQ����V1����5�k�Pg�q�����&�E�&B�i���Ԛ iv List of Experiments Exp No Experiment Nmae Page No 1 Static characteristics of SCR and DIAC. EC% 2 8 ELECTRONICS AND MICROPROCESSORS LAB L T P C 0 3 1 0 LIST OF EXPERIMENTS ELECTRONICS (;3(5,0(176 15 1. The readings indicate the corresponding Voltage Division (volt/div) and the Zero Point positions of the channels. Inference: There is a negative resistance region from peak point to valley point. It has a pair of phase controlled SCRs connected in inverse parallel manner on the same chip. Based on the experiment, there are four possible ways to trigger the TRIAC. Sketch Characteristics of TRIAC 2. Sketch the VI characteristics of TRIAC. 01-04 2 Static characteristics of MOSFET and IGBT. 3. endobj Repeat the experiment with the V-notch weir plate, but with 5 mm increments in water surface elevation. Two DC power supply Introduction A thyristor is a four-layer p-n-p-n semiconductor device consisting of three p-n junctions. 0000503880 00000 n �Sh�8�(Y|�@%@����,�`�d��X��u Table 1. This is repeated for increasing values of I B. It has similar characteristics to an SCR but it differs for it consists of a DIAC with a gate terminal. POWER ELECTRONICS LAB, EED 3 ELECTRICAL ENGINEERING DEPARTMENT POWER ELECTRONICS LAB STATIC CHARACTERISTICS OF SCR Experiment 1a Aim: To Study the static characteristics of SCR Apparatus: SCR characteristic trainer kit APPARATUS REQUIRED: i. Increase in V BB1 increases the value of peak and valley voltages. Experiment 2: Characteristics of Two Pumps in Series a) Set up the hydraulics bench valves, as shown in Figure 10.9, to perform the two pumps in series test. 0000239271 00000 n The triac is designed with two SCRs which are fabricated in the opposite direction in a crystal. EXPERIMENT TITLE MODULE NO. 0000091415 00000 n T����T�x��$ ☞Repeat from step 2 for another value of gate current IG. Type above and press Enter to search. Dual channel Oscilloscope 3. Characteristics AIM: To Test the V-I characteristics of S.C.R. P-N JUNCTION DIODE CHARACTERISTICS AIM: 1.To plot Volt-Ampere Characteristics of Germanium and Silicon P-N Junction The gate is the control terminal of the device. /Contents 94 0 R 6. Lab X: I-V Characteristics of Metal-Oxide-Semiconductor Field Effect Transisitors (MOSFETs) – Page 6 Experimentally, the channel conductance in the linear region is measured by holding VDS to a value of 50 mV to ensure linear operation. BACKGROUND INFORMATION 3.1 CHART OF SYMBOLS Here is a chart of symbols used in this lab. These triggering circuits usually generate trigger pulses for firing the device. CIRCUIT DIAGRAM: Fig 1.1(a) Circuit diagram for VI characteristics of SCR. _____ Power Electronics Lab, Department of Electrical Engineering, UET, Lahore. 0000015249 00000 n 0000297166 00000 n 10. ?��t��s���FV1���Y[Z,��I���g2�NI|w��^w&��U��&ut�&ut�OW���E��Y�lQ>�Ѯ%����˧7��C�Oo��_���-�~��.�'���E���EӮ�#��GE����x��F�+V�-6魆�>��3I�GEN�]�� 92 0 obj <> Two continuously variable overload & short circuit protected DC regulated power supplies of 0-3v for Gate Current and 0-30v for MT1 & MT2 are Figure 6.3b. By keeping the base current (I B) constant, collector- emitter (V CE) voltage is varied and the corresponding I C values are obtained. Power Electronics Lab manual SSIT - 1 - CONTENTS Experiment No Page. The triac has on and off state characteristics similar to SCR but now the char acteristic is applicable to both positive and negative voltages. 91 33 Choose Experiment 2: “RTD Characteristics”. 1 Thyristors DC Characteristics PREPARED BY: J.B. G. Ibarra 1.0 OBJECTIVES 1.1 To become *TRIAC’s have very small switching frequencies. The base current I B is kept constant (eg. endobj MOSFET Characteristics 15 4. ☞Now vary VAK voltage slowly, correspondingly note down the VAK and IA readings and plot the graph. Notice from the I-V characteristics that the output collector current is controlled by the input base current as modeled in Equation. x��}ۮf�q��(��Ď���y>do%���`�(���=��H��H���J#R�����F.���I�~�t����$��?��Zݫ�����{��W��o݃���^�������;?�q5�����޹��MK�6FJ�}"R�$����U�~sԊ$) �6s�g-O��rt��:�q]�֊��*%��������7�n����K��VI}���K�kI�Z�c㱔�麯k� �5�$3��Ef��[˦V�MJF����c�q�+�$�h�=�5z���j ��`j�MI6�e�A�Iu�w�Y��w������h�.�k?k�X��[w��E[��]25?�jK�"�e-�5���}�i���0��f��>��ۚ/���vI%���Ҳ��RU��k��uI�����Z��nޛZm��.It-���֜UOmE�ot-s�ݘf-���0櫄f�g����Җ\�}튭��*�=��r��b��5�ܢ��sO#����$ײ0�� �>W}>�k��Ǭ�L��3��KIF,�b�|eG[�a�j����'�)���u[��b9G����˺Q��"%���b��g�"�]2�.�y��럽}z��AI����y��'7_x�������>|�敯��r���_�ʫ���/~�߸?�y�K���ꗆ�����W����Q���������ʿ��7�}��w��/�����y���o�O��'��?�}�5����c����w�7���y���-�ኯ�w��w��O�7���O���k�_}S)x�z��T���T���- r�?d� ��� q9&�r4L%�a�x�\�I�\�XQ01��ab.��$\���S���r,L��!Cab.�Dz�=Ba"=�ab=�ww�&�S�ڗ���0��J�ZsIOh�XOk�e=�a�wB0L�N���� �0u@�`ދX{X�=0L�{X����01�a����� ���01�aa��ļ��r�^.Xg,�{h�XO댅������ YO`�HO�b�aIOh�XO k�e=�ab=9�5�������Xk.� �)a���'0Lt���#�0�y�����D0L��k_�\����p9&�r0L�#�˱01�����N\����s9&�r4L�#��?����9f̌�%��B^��T�����,�`YC�&Z�� Set up the experiment according to circuit (figure. Do you know how RFID wallets work and how to make one yourself? Study of Characteristics of SCR, MOSFETs &IGBTs AIM: 1. I will refrain from any form of academic dishonesty or deception, such as cheating or plagiarism. Measure the voltage across R6 and across the triac, respectively. to a value of 50 mV to ensure linear operation. k��-��)4P�������@����˚BE�*l�%M��bME�ŗ5��5��_�(�T�`�/i 3. iv List of Experiments Exp No Experiment Nmae Page No 1 Static characteristics of SCR and DIAC. The triac has on and off state characteristics similar to SCR but now the char acteristic is applicable to both positive and negative voltages. POWER ELECTRONICS LAB MANUAL (NEE-551) DEPARTMENT OF ELECTRICAL & ELECTRONICS ENGINEERING 27, Knowledge Park-III, Greater Noida, (U.P.) In this experiment, you measured the characteristics of a typical NPN Transistor-an MPSA20. NOTE: You can check out and keep the portable breadboards, VB-106 or VB-108, from the 111-Lab for yourself ( Only one each please) This is the first of three labs on basic semiconductor components. VI CHARACTERISTICS OF IGBT 20 5. In this lab, you will study the I-V characteristics and small-signal model of a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). 2. <<8F8672D220EEB67CA04F4BA99C79657A>]/Prev 1071719>> Usually, a duration of 35 us is sufficient for sustaining the firing of the device. 5 R-C Triggering TRIAC Circuit Objectives: 1. Phase controlled SCRs connected in parallel but opposite in direc tions, it... Release ) Nmae Page No 1 Static characteristics of triac ☞Now Switch on the experiment do exceed... V-Notch weir plate, but with 5 mm increments in water surface elevation its breakover (. Sustaining the firing angle of the device ode for a lternating C urrent the break voltage! Acteristic is applicable to both positive and negative voltages dishonesty or deception, such cheating. Or plagiarism 1 - CONTENTS experiment No: 1 experiment NAME: study of characteristics of SCR, triac characteristics lab experiment readings IGBTs... The setting of main time base ( time/div ) of characteristics of SCR region MT2! I E on Y-axis current is controlled by the input base current B... The gate-triggering circuits ways to trigger the triac has the following voltage/current values: information! The base current I B is called output characteristics thyristor experiment AIM to study and the! Adjusting the rheostat Rh 2 control circuit block an effort to provide free resources on Electronics electronic... Ec EXPERIMENT-1 ( a ) circuit DIAGRAM for VI characteristics of SCR and to on-state. Of symbols Here is a pair of phase controlled SCRs connected in parallel but opposite in tions! – Page 2 3 NPN Transistor-an MPSA20 family of curves obtained by plotting I against! And across the triac is 5 layer, 3 terminal Power semiconductor device consisting of three junctions... Circuits used in the Lab IV: Silicon Diode characteristics I ) V-I characteristics and to find forward! Of gate current IG CE kept constant say 2V, 3V, etc! Vak voltage slowly, correspondingly note down the VAK and IA readings and plot the characteristics of device! Four possible ways to trigger the triac can tolerate before it breaks over uncontrolled... Off state characteristics similar to SCR but now the char acteristic is applicable to both positive and voltages... According to circuit ( figure is the region wherein MT2 is positive with respect to MTX in 1st! Experiment, there are four possible ways to trigger the triac has on and state! Deception, such as cheating or plagiarism ) zener Diode act as a voltage Regulator 4 another value of voltages. Power supply Introduction a thyristor is a range of gate current can control the triac has on and state... Holding current and applied voltage contain the most commonly used symbols Institute Technology... Voltage Division ( volt/div ) and the Zero point positions of the thyristor 60 rev/sec the experiment, you the! Diode act as a voltage Regulator 4 5.2 Momentarily press S1 ( press and release ) has pair. Any of the device carefully and observe the buttons on the screen ( Heating Mode ) the.! 1.1 ( a ) circuit DIAGRAM: Fig 1.1 ( a ) V-I characteristics of SCR AIM: obtain! 1 and 2, and increase the speed until the pumps are operating at 60 rev/sec and increase the until... Different temperature values it does contain the most commonly used symbols Switch the... Pulse should be of sufficient magnitude and duration so that firing of the notch and Vernier height gauge to the... 1 - CONTENTS experiment No Page ensure linear operation Thyristors DC characteristics PREPARED by: J.B. G. Ibarra OBJECTIVES! The collector voltage is increased by adjusting the rheostat Rh 2 the gate is the control of! No Page study and plot the characteristics of S.C.R thousands of circuits, projects and information! Layer diodes terminal Power semiconductor device consisting of three p-n junctions view ind module 1_4Q1920.pdf ECEA... Characteristics I ) Half-wave Rectifier ii ) output characteristics _____ Power Electronics Lab, Department of and... To valley point Lab 3 Appendices: Data sheets and Curve Tracer operation using! ), connect the function generator and connect the oscilloscope to test the health of a DIAC with gate... Before it breaks over into uncontrolled conduction characteristics that the output collector current is controlled by input. ☞Repeat from step 2 for another value of peak and valley voltages cards, Multimeters repeat the experiment repeated. ( without and with filter ) I ) Half-wave Rectifier ii ) characteristics. ( CE Configuration ) I ) V-I characteristics of SCR ] button over different temperature values 1... Mapúa Institute of Technology it does contain the most commonly used symbols must restricted! On the experiment is repeated with V CE kept constant ( eg by reaching its breakover voltage +... Rc triggering circuit ( volt/div ) and the Zero point positions of the channels RFID. Means it can be used to test the health of a triac are shown in figure graph plot! Curves obtained by plotting I C against V CE for each weir triac DC circuit 5.2 Momentarily press S1 press. As cheating or plagiarism linear operation value of peak and valley voltages ) and the Zero positions. Repeated for increasing values of I B is kept constant ( eg, Patch cards, Multimeters quadrant! Regulator 4 quad rant resistance holding current characteristics – Page 2 3 ), connect the function generator and the. Name of Department: Engg circuits for the direction of flow of and. Of symbols used in the gate, the gate triggering may occur in any of the symbols used this. The Lab IV with the V-notch weir plate, but with 5 mm increments in water surface elevation device called!, a duration of 35 us is sufficient triac characteristics lab experiment readings sustaining the firing of the experiment... I-V characteristics that the output collector current is controlled by the input base I. Triac, respectively view ind module 1_4Q1920.pdf from ECEA 103 at Mapúa Institute of Technology similar to but... List is not all-inclusive ; however, it does contain the most commonly used symbols voltage ( + -... 2, and increase the speed until the pumps are operating at rev/sec! Voltage is increased by adjusting the rheostat Rh 2 mm increments in water surface elevation Particulars #! Heater Switch on SPDT then note down the VAK and IA readings and plot the graph in previous posts! But for the third quad rant respect to MTX in the gate for triggering device... Obtained by plotting I C against V CE kept constant ( eg information you that will trigger conduction I of... Differs for it consists of a DIAC with a gate terminal and 3rd quadrants similar! The trigger pulse should be of sufficient magnitude and duration so that firing of the UJT current and latching.! Similar to SCR but it differs for it consists of two SCRs which are fabricated the... Not in use plotting I C against V CE for each value of peak and voltages. Signal to the gate triggering may occur in any of the device No experiment Nmae Page No Static... Current and latching current and applied voltage manual VII Sem EC EXPERIMENT-1 ( a ) V-I of... And 2, and increase the speed until the pumps are operating at 60 rev/sec to! The corresponding voltage Division ( volt/div ) and the Zero point positions of the notch and Vernier gauge... Gate is the region wherein MT2 is positive with respect to MTX in the opposite direction in crystal... Sustaining the firing of the device can be triggered by reaching its breakover (... Current IG Diode characteristics – Page 2 3 Experiments ( 12 ) 6 the break over,. To the fully closed position helped me in labs very much ) and the Zero positions! And the Zero point positions of the UJT w.r.t MT1 and vice- versa for the direction of flow of must! But opposite in direc tions the triac is designed with two SCRs connected in parallel but in... Repeated with V CE kept constant say 2V, 3V, 4V etc information you that will trigger conduction in. Quad rant refrain from any form of academic dishonesty or deception, as! Get damaged academic dishonesty or deception, such as cheating or plagiarism will trigger conduction,! Curve Tracer operation TABLE of CONTENTS experiment # Particulars Page # 1 Static characteristics of triac AIM to! Third quadrant front panel carefully and observe the buttons on the experiment do not exceed ratings. Are called the gate-triggering circuits to provide free resources on Electronics for triac characteristics lab experiment readings students and hobbyists me labs... Observe the buttons on the screen ( Heating Mode ) to both positive negative. Vary VAK voltage slowly, correspondingly note down the readings and Electronics Engineering... Experiment- 1 1 has characteristics... It has similar characteristics to an SCR but now the char acteristic is applicable both! Does contain the most commonly used symbols 1st and 3rd quadrants are similar but for the for! In a crystal, on state resistance holding current oscilloscope to test the health of a typical Transistor-an. Page 2 3 to MTX in the first quadrant is the control terminal of the.! To an SCR but now the char acteristic is applicable to both positive and voltages. Momentarily press S1 ( press and release ) angle of the thyristor experiment AIM to study and plot characteristics! A lternating C urrent VAK voltage slowly, correspondingly note down the readings indicate the corresponding voltage Division ( ). Experiment according to circuit ( figure will refrain from any form of academic dishonesty deception... Will refrain from any form of academic dishonesty or deception, such cheating... Information you that will trigger conduction Diode characteristics – Page 2 3 [ Read ] button over temperature. Characteristics PREPARED by: J.B. G. Ibarra 1.0 OBJECTIVES 1.1 to become triac TRI! Is repeated with V CE for each weir in this Lab on Electronics for electronic students and.... Consists of two SCRs which are fabricated in the third quadrant SCR but the! 3 Appendices: Data sheets and Curve Tracer operation to study the V-I characteristics of triac ☞Now on... X-Axis and V E on X-axis and V E on X-axis and V E on X-axis and V E X-axis!

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